2sa2169/2sc6017 no. 8275-1/10 applications ? relay drivers, lamp drivers, motor drivers features ? adoption of mbit processes ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching speci cations ( ): 2sa2169 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)100 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)10 a collector current (pulse) i cp pw 100 s (--)13 a continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : EN8275a 82212 tkim/32505ea tsim tb-00001269 sanyo semiconductors data sheet 2sa2169/2sc6017 pnp/npn epitaxial planar silicon transistor high-current switching applications http://www.sanyosemi.com/en/network/ product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : s c-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-f a 2sa2169-e 2sc6017-e 2sa2169-tl-e 2sc6017-tl-e a2169 c6017 lot no. lot no. 2,4 3 1 2sc6017 2,4 3 1 2sa2169
2sa2169/2sc6017 no. 8275-2/10 continued from preceding page. parameter symbol conditions ratings unit base current i b (--)2 a collector dissipation p c 0.95 w tc=25 c20w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)10 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)10 a dc current gain h fe v ce =(--)2v, i c =(--)1a 200 (560)700 gain-bandwidth product f t v ce =(--)5v, i c =(--)1a (130)200 mhz output capacitance cob v cb =(--)10v, f=1mhz (90)60 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)5a, i b =(--)250ma (--290)180 (--580)360 mv base-to-emitter saturation voltage v be (sat) i c =(--)5a, i b =(--)250ma (--)0.93 (--)1.4 v collector-to-base breakdown voltage v (br)cbo i c =(--)100 a, i e =0a (--50)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)100 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (70)40 ns storage time t stg (650)1000 ns fall time t f (60)80 ns switching time test circuit ordering information device package shipping memo 2sa2169-e tp 500pcs./bag pb free 2sc6017-e tp 500pcs./bag 2sa2169-tl-e tp-fa 700pcs./reel 2sc6017-tl-e tp-fa 700pcs./reel v r r b v cc =20v v be = --5v + + 50 input output r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =3a for pnp, the p olarit y is reversed.
2sa2169/2sc6017 no. 8275-3/10 6ma --5.0 --3.0 --4.5 --4.0 --3.5 --2.0 --2.5 --1.0 --1.5 --0.5 5.0 3.0 4.5 4.0 3.5 2.0 2.5 1.0 1.5 0.5 0 --0.5 0 --1.0 --1.5 --2.0 i c -- v ce --2ma --6ma --8ma --10ma i b =0 it08961 0.5 0 1.0 1.5 2.0 0 i c -- v ce i b =0 2ma 4ma 8ma 10ma 20ma 12ma 14ma 16ma it08962 2sa2169 2sc6017 --18ma --16ma 18ma --12ma --4ma --14ma --20ma collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a --25 c ta=75 c 25 c --25 c 1000 100 7 7 5 3 2 5 --0.01 3 25 --10 --0.1 73 257 3 257 --1.0 h fe -- i c 2sa2169 v ce = --2v 1000 100 7 7 5 3 2 5 0.01 3 25 10 0.1 73 257 3 257 1.0 it08965 h fe -- i c it08966 0 0 i c -- v be it08964 ta=75 c 25 c 2sa2169 v ce = --2v --1.0 --0.8 --0.6 --0.4 --0.2 1.0 0.8 0.6 0.4 0.2 0 0 --0.2 --0.1 --0.4 --0.3 --0.6 --0.5 --0.8 --1.0 --0.7 --0.9 0.2 0.1 0.4 0.3 0.6 0.5 0.8 1.0 0.7 0.9 i c -- v be it08963 --25 c ta=75 c 25 c 2sc6017 v ce =2v ta=75 c 25 c -- 2 5 c 2sc6017 v ce =2v cob -- v cb 3 2 2 7 5 3 100 it08968 2sc6017 f=1mhz cob -- v cb 5 3 2 7 5 3 100 37 --0.1 25 2 --1.0 37 5237 5 --10 37 0.1 25 2 1.0 37 5237 5 10 it08967 2sa2169 f=1mhz base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf
2sa2169/2sc6017 no. 8275-4/10 f t -- i c 3 100 10 2 7 5 3 2 --0.01 257 3 --0.1 257 3257 3 --1.0 --10 it08969 2sa2169 v ce = --5v f t -- i c it08970 2sc6017 v ce =5v 3 100 10 2 7 5 3 2 0.01 257 3 0.1 257 3257 3 1.0 10 collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a gain-bandwidth product, f t -- mhz v be (sat) -- i c 3 --1.0 2 --0.01 --0.1 --10 ta= --25 c 25 c 2 7 5 3 23 57 2 --1.0 357 2357 2sa2169 i c / i b =50 it08975 2sc6017 i c / i b =50 v be (sat) -- i c it08976 75 c 3 1.0 2 0.01 0.1 10 ta= --25 c 25 c 2 7 5 3 23 57 2 1.0 357 2357 75 c --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 7 5 3 2 7 5 3 2 7 5 3 2 --0.1 --1.0 --0.01 v ce (sat) -- i c it08973 ta=75 c 25 c --25 c 0.01 0.1 23 57 23 57 23 57 1.0 10 7 5 3 2 7 5 3 2 0.1 0.01 ta=75 c 25 c -- 2 5 c 2sa2169 i c / i b =50 v ce (sat) -- i c it08974 v ce (sat) -- i c it08972 2sc6017 i c / i b =20 --1.0 --0.1 2 3 5 7 2 3 5 7 --0.01 5 7 3 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 v ce (sat) -- i c ta=75 c --25 c it08971 2sa2169 i c / i b =20 25 c 1.0 0.1 2 3 5 7 2 3 5 7 0.01 5 7 3 0.01 0.1 23 57 23 57 23 57 1.0 10 ta=75 c --25 c 25 c 2sc6017 i c / i b =50 collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector current, i c -- a collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v
2sa2169/2sc6017 no. 8275-5/10 0.01 1.0 7 5 3 2 7 5 3 2 0.1 3 10 5 7 3 2 2 it09360 a s o 0.1 1.0 23 57 23 57 2 7 5 3 10 2sa2169 / 2sc6017 tc=25 c single pulse for pnp minus sign is omitted. i cp =13a (pw 100 s) i c =10a 100 s 500 s 10 s 1ms 10ms dc operation 100ms 0 0.2 0.4 0.6 0.8 1.0 0.95 0 20 40 60 80 100 120 140 160 p c -- ta it09361 2sa2169 / 2sc6017 collector-to-emitter voltage, v ce -- v collector current, i c -- a no heat s i nk ambient temperature, ta -- c collector dissipation, p c -- w 0 p c -- tc it09362 5 10 20 15 25 0 20 40 60 80 100 120 140 160 2sa2169 / 2sc6017 collector dissipation, p c -- w case temperature, tc -- c
2sa2169/2sc6017 no. 8275-6/10 taping speci cation 2sa2169-tl-e, 2sc6017-tl-e
2sa2169/2sc6017 no. 8275-7/10 outline drawing land pattern example 2sa2169-tl-e, 2sc6017-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2sa2169/2sc6017 no. 8275-8/10 bag packing speci cation 2sa2169-e, 2sc6017-e
2sa2169/2sc6017 no. 8275-9/10 outline drawing 2sa2169-e, 2sc6017-e mass (g) unit 0.315 * for reference mm
2sa2169/2sc6017 no. 8275-10/10 ps this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
